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Isamu Akasaki (赤崎 勇, Akasaki Isamu, born January 30, 1929) is a Japanese scientist and Nobel Prize laureate, known for inventing the bright gallium nitride (GaN) p-n junction blue LED in 1989 and subsequently the high-brightness GaN blue LED as well.[1][2][3][4][5]
For this and other work Isamu Akasaki was awarded the Kyoto Prize in Advanced Technology in 2009[6] and the IEEE Edison Medal in 2011.[7] He was also awarded the 2014 Nobel prize in Physics, together with Hiroshi Amano and Shuji Nakamura.[8]
Born in metalorganic vapor phase epitaxy (MOVPE) as the preferred growth method for GaN.
In 1981 he started afresh the growth of GaN by MOVPE at Nagoya University, and in 1985 he and his group succeeded in growing high-quality GaN on sapphire substrate by pioneering the low-temperature (LT) buffer layer technology.[10][11]
This high-quality GaN enabled them to discover p-type GaN by doping with magnesium (Mg) and subsequent activation by electron irradiation (1989), to produce the first GaN p-n junction blue/UV LED (1989), and to achieve conductivity control of n-type GaN (1990)[12] and related alloys (1991)[13] by doping with silicon (Si), enabling the use of hetero structures and multiple quantum wells in the design and structure of more efficient p-n junction light emitting structures.
They achieved stimulated emission from the GaN firstly at room temperature in 1990,[14] and developed in 1995 the stimulated emission at 388 nm with pulsed current injection from high-quality AlGaN/GaN/GaInN quantum well device.[15] They verified quantum size effect (1991)[16] and quantum confined Stark effect (1997)[17] in nitride system, and in 2000 showed theoretically the orientation dependence of piezoelectric field and the existence of non-/semi-polar GaN crystals,[18] which have triggered today’s world-wide efforts to grow those crystals for application to more efficient light emitters.
Professor Akasaki’s patents were produced from these inventions, and the patents have been rewarded as royalties. Nagoya University Akasaki Institute[19] opened on October 20, 2006. The cost of construction of the institute was covered with the patent royalty income to the university, which was also used for a wide range of activities in Nagoya University. The institute consists of an LED gallery to display the history of blue LED research/developments and applications, an office for research collaboration, laboratories for innovative research, and Professor Akasaki's office on the top sixth floor. The institute is situated in the center of the collaboration research zone in Nagoya University Higashiyama campus.
Nobel Prize in Literature, Physics, Nobel Prize, Nobel Prize in Chemistry, Nobel Peace Prize
Nobel Prize in Physiology or Medicine, Nobel Peace Prize, Nobel Prize in Literature, Nobel Memorial Prize in Economic Sciences, Sweden
Library of Congress, Diana, Princess of Wales, Latin, Oclc, Integrated Authority File
Silicon, Infrared, Lighting, United States Department of Energy, Diamond
1928, 1924, 1929, 1926, 1923
Nobel Prize in Literature, Nobel Prize in Physics, Nobel Prize in Chemistry, Nobel Prize in Physiology or Medicine, Nobel Peace Prize
Japan, Private university, Tempaku-ku, Nagoya, Kani, Gifu, School colors
IEEE Edison Medal, General Electric, Smithsonian Institution, Patent, Manhattan College